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Path Catalog
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This learning path guides undergraduate engineering students through the systematic classification of defects in semiconductors—point, line, planar, and volume defects—and their effects on semiconductor properties. It builds from essential crystallography and semiconductor physics foundations, then explores each defect type, their electrical effects (including deep levels and carrier lifetime), and characterization techniques, culminating in practical case studies.
This learning path guides undergraduate engineering students through the fundamental principles and applications of key semiconductor characterization techniques, including XRD, Hall effect, PL, EL, FTIR, SIMS, CV profiling, and DLTS. It builds on semiconductor physics foundations to enable learners to select and apply appropriate techniques for evaluating material properties.
This learning path guides undergraduate engineering students through the fundamental principles and techniques of epitaxial growth for semiconductor thin films. It covers essential background in thermodynamics and surface science, followed by detailed study of major growth methods (LPE, VPE, MOCVD, MBE), in situ monitoring, and the distinction between homoepitaxy and heteroepitaxy. The path concludes with practical considerations for material quality and applications.
This path guides undergraduate engineering students through the fundamental methods of introducing dopants into semiconductors, focusing on thermal diffusion and ion implantation, including activation annealing and profile characterization. Starting from the basics of semiconductor doping, the path progresses through process physics and practical considerations to achieve a working understanding of modern doping techniques.
This learning path guides undergraduate engineering students through the fundamental physics of wide bandgap semiconductors, focusing on GaN, SiC, ZnO, and AlN. It covers the origin of wide bandgaps, their influence on electrical and thermal properties, and implications for high-power, high-temperature, and high-frequency applications. The path builds from basic semiconductor physics to advanced material-specific comparisons.
This learning path guides undergraduate engineering students through the fundamental properties and applications of gallium arsenide (GaAs) and related III-V compound semiconductors. Starting with basic semiconductor physics and crystal structures, it progresses to band structure, carrier transport, heterojunctions, and key devices, culminating in a comprehensive understanding of GaAs-based technologies.
This learning path guides undergraduate engineering students through the fundamental physics and material science needed to compare compound semiconductors (III-V, II-VI, and IV-IV) against silicon. It covers crystal structures, band theory, bandgap engineering, and key material properties, culminating in a systematic comparative analysis.
This learning path guides undergraduate engineering students through the fundamental properties of silicon and its processing into semiconductor wafers. It covers crystal growth techniques, wafer preparation, common defects, and the role of impurities, building from basic semiconductor physics to advanced processing concepts.
This learning path guides undergraduate engineering students through the fundamental physics of p-n junctions. It starts with essential semiconductor concepts, progresses through the formation and characteristics of the junction, and culminates in a detailed analysis of bias conditions, current-voltage behavior, and capacitance. The path emphasizes the underlying carrier transport and recombination mechanisms.
This learning path guides undergraduate engineering students through the fundamental concepts of carrier recombination in semiconductors. Starting from carrier statistics and non-equilibrium conditions, it systematically covers direct and indirect recombination, radiative and Auger processes, and Shockley-Read-Hall recombination, culminating in an understanding of carrier lifetime and its measurement.