Learning Path

Crystal Structure and Defects in Semiconductors → Material Quality and Characterization

This learning path guides undergraduate engineering students through the fundamental principles and techniques of epitaxial growth for semiconductor thin films. It covers essential background in thermodynamics and surface science, followed by detailed study of major growth methods (LPE, VPE, MOCVD, MBE), in situ monitoring, and the distinction between homoepitaxy and heteroepitaxy. The path concludes with practical considerations for material quality and applications.